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Information × Registration Number 0214U001867, 0112U004024 , R & D reports Title Development of technology for heteroepitaxial InGaN/GaN/Al2O3 LED structures by the method of gas-cycle epitaxy popup.stage_title Head Belyaev Alexander, Доктор фізико-математичних наук Registration Date 12-09-2014 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The MOCVD technology process for formation light emitting structures AlGaN/InGaN/GaN/Al2O3 with perfect heterointerfaces Inх2Ga1-х2N/p-AlхGa1-хN, p-AlхGa1-хN/p-GaN and good quality morphology of the contact layer surface has been optimized. The process provides obtaining the structures with energy effectivity higher 80 Lm/W. Product Description popup.authors Бєляєв О.Є. Кость Я.Я. Круковський Р.С. Круковський С.І. Михащук Ю.С. Мрихін І.О. Назаренкова Т.І. Наумов А.В. popup.nrat_date 2020-04-02 Close