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Information × Registration Number 0214U001983, 0114U001753 , R & D reports Title The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices popup.stage_title Head Shwarts Yuriy Mikhailovich, Registration Date 16-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 On basis of thermal deposition Ge in a vacuum new technology of nano-dimensional Ge films on GaAs and Si for manufacturing of electronic devices was developed. The new design of thermometry on base of Ge nanofilms was developed. A new two-step method of thermal vacuum deposition of nanofilms of Ge-Si and GexSi1-x with x = 0.5 on substrates Si was developed. Product Description popup.authors Борблик В.Л. Фонкіч О.М. Шварц М.М. popup.nrat_date 2020-04-02 Close