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Information × Registration Number 0214U002373, 0111U000480 , R & D reports Title Development of physical principles of radiation technologies for modifying the properties of silicon crystal, amorphous and composite materials. popup.stage_title Head Neimash V.B., Доктор фізико-математичних наук Registration Date 29-01-2014 Organization Institute of physics NASU popup.description2 Exposure to ionizing radiation and doping impurities fourth group on electrical , optical and structural parameters of crystalline silicon and amorphous states and their nanocomposites investigated in the application of new technologies in the production of relevant materials properties. Established that electron irradiation can significantly stimulate annealing of radiation defects created him. The mechanism of temperature effect on vacancies generation efficiency due to the interaction of "hot" atoms with acoustic and optical phonons is proposed. Reviewed by a cross section of this interaction and explains the mechanism of phonon energy loss. By analyzing the results of experimental studies of the temperature and radiation intensity effect on the radiation defects accumulation kinetics in Si single crystals developed new physical principles of radiation technology for parameters control of Si and based on a powerful electron irradiation at T = 450- 520C . New technology can significantly increase the stability of parameters radiation modified devices based on Si. The effect of doping impurities Sn and C , as well as thermal treatments and irradiation by relativistic electrons were used to the transformation of Si from amorphous to the crystalline state. It is shown that alloying tin lowers the temperature of the onset of crystallization of amorphous Si and SiOx on the 450S and 200C respectively. The result is amorphous- crystalline nano- composites formation with a dominant size of 3-5 nm silicon crystals in a matrix of amorphous Si and 6.9 nm in amorphous SiO2. The mechanism of tin induced crystallization of the amorphous silicon is proposed. A physical principles of technology for band gap management of silicon film for photovoltaic energy conversion devices by forming nano -sized particles of crystalline Si in the amorphous matrix of alloys group IV elements and their modification by thermal and radiation treatments are developed. The technology of manufacturing nano-Si film for solar cells are much cheaper current and allows the use of flexible plastic substrates . The samples of new thin film of amorphous and amorphous- crystalline materials based on Si, with variable band gap within 1.1 - 1.6 eV are produced. Product Description popup.authors Войтович Василь Васильович Довгалюк Руслан Олексійович Колосюк Андрій Григорович Красько Микола Миколайович Неймаш Володимир Борисович Поварчук Василь Юрієвич Рогуцький Іван Станіславович Яроцький Василь Іванович popup.nrat_date 2020-04-02 Close