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Information × Registration Number 0214U002551, 0111U001005 , R & D reports Title Low-temperature obtaining of silicon carbide films with preset properties meant for electronics and optoelectronics popup.stage_title Head Semenov Aleksandr Vladimirovich, Registration Date 16-01-2014 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 Temperature dependences of electrical conductivity of nanocrystalline SiC films with different polytype composition, photoluminescence in 3C-SiC polytype and the influence of the boundary regions between the nanocrystals, are investigated. Studied are initial thermophysical conditions of the growth of SiC films on substrates at 800 degrees centigrade under direct deposition of carbon and silicon ions, and peculiarities of the change of the structure and electrophysical properties of 3C-SiC polytype films at laser treatment by 355 nm picosecond pulses with a power up to 1,5 Wt. Product Description popup.authors Лопін Олександр Володимирович Пузіков Вячеслав Михайлович popup.nrat_date 2020-04-02 Close