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Information × Registration Number 0214U005123, 0112U008358 , R & D reports Title Creation of semiconduktor layers on non mon oriented and developed surface substrates by vacuum-thermail evaporation and annealing popup.stage_title Head Baganov Yevgen Aleksandrovich, Registration Date 06-02-2014 Organization Kherson national technical university popup.description2 The mathematical model and computer algorithm, that allows to calculate thermal conditions at the crystallization front were built. This algorithm also allows to determine the time-temperature dependence and power of heater that provides a necessary time dependence of temperature at the front of crystallization. The dependences of substrate and solution-melt temperature on furnace and evaporator temperatures were obtained. The approach for calculation of thickness of deposited amorphous layers was adapted according to the process. The test experiments for obtaining of polycrystalline layers using the proposed method were carried out on the base of equipment UVR-3M. The presence of polycrystalline structure was shown, that proves the applicability of the method for growing polycrystalline layers of A3B5 compounds on a nonorienting substrates. Product Description popup.authors Томілова Владислава Владиславівна popup.nrat_date 2020-04-02 Close