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Information × Registration Number 0214U005430, 0110U005722 , R & D reports Title The methods and computer based equipment developement for nanocrystal memory samples diagnostics. popup.stage_title Head Nazarov Olexiy Mykolayovich, Registration Date 27-02-2015 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Research object - heterocyclic, SiO2 (Si) / Si, Si/SiO2/Si, nanoclusters, nanocrystals, metrology. The Purpose - The purpose of the project is to development of methods for nonvolatile memory electrical properties diagnosing, which was created with dielectric floating gate of 2D layer of Si nanocrystals, and the creation of specialized diagnostic setup. Creation of software algorithms and software for their computer -based process control electro research at the facility. Testing of hardware and software for the test samples MOS -type nonvolatile memory transistor with nanoinclusions and specialized structures. During the project time the experimental hardware setup that has block structure was established. The special hardware parameters were selected to satisfy the experimental requirements of memory programming voltage by 65V in both polarities, pulse duration of 100ns and temperatures up to 400C. The method of diagnosing window width programming / erasure of nanocrystal memory MOS structures of two or more two-dimensional layers of nanoinclusions in the dielectric. Methods describing the procedure for diagnosing memory cells at different modes of programming, including one polar, and the presence of external factors such as constant electric displacement structure of the experiment, heating and external illumination to generate electron-hole pairs in the inversion mode of the cell. The charge relaxation method was developed for determining the characteristics of the cell during reprogramming. The technique allows to experiment on research performance memory cells, which includes the presence of elevated temperatures and constant electric displacement memory cells. To improve the accuracy of the proposed variable frequency measurement values relaxing charge. The investigation method was developed with aim to investigate the physical processes responsible for the lifetime duration property of memory cells. The methodology describes the process of measuring changes in charge in the dielectric of memory cells with minimal impact of measurement process to the charge state of the cell, which is especially vital for valid results achievement on the nanocrystal memory devices. The algorithms based on the presented techniques were built gradually. The software was created on licensed software package National Instruments LabView, which provides easy installation and replication cross platform hardware. The software has a user friendly interface and allows one to adjust the measurement mode, the order processing of measured data and storage to simplify and speed up the analysis. The hardware revision was performed to enable the rapid diagnosis of window width programming / erasing recording on cells over time, determine the relaxation characteristics of recording a charge in memory cells by reprogramming at elevated temperature and voltage offset by the software. Methods of rapid diagnosis significantly reduced measurement time that is quite long and often takes more than an hour. The testing was gradually accomplished to check correctness of developed techniques on nanocrystalline nonvolatile memory cells with one or two layers of nanoclusters in the dielectric. Obtained new scientific results that allows deeper investigation of nonvolatile memory cell. The results are published in international scientific journals and presented at national and international conferences; method of diagnosing dielectric layers filed for a patent. SILICON, heterostructures, nanoclusters, nanocrystals, diagnosis, NVM. Product Description popup.authors Євтух В.А. В.І. Смірная Гоменюк Ю.В. Римаренко Н.Л. popup.nrat_date 2020-04-02 Close