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Information × Registration Number 0214U005447, 0110U004655 , R & D reports Title Development and progress of methods of submicron topography and passport systems of chemical composition, structural perfection, electrophysics parameters and strain distributing in the nanostructures of electronics and optoelectronics. popup.stage_title Head Strelchuk Viktor Vasylyovych, Доктор фізико-математичних наук Registration Date 30-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 A complex of nano-diagnostic nondestructive optical methods to study the spatial distribution of physical parameters of semiconductor nanostructured elements of micro- and nano-electronic devices and the dynamics of their variation at the applied operating voltage is designed. A modernization of micro-cryostat by providing the electrical contacts into its working chamber is performed, that made it possible to connect different external loads. The chamber of the cryostat is adapted for the microscope objective of the Raman spectrometer. On the basis of carried out measurements in operating regimes of the device structures using Raman and PL methods, the detailed analysis of the relevant physical phenomena in nanostructures is provided and fundamental properties of interacting multielectron and phonon subsystems in polar nanostructures in conditions far from equilibrium, in particular, at high electrical fields and currents applied. Product Description popup.authors Авраменко Катерина Андріївна Бойко Микола Іванович Губанов Віктор Олександрович Коломис Олександр Федорович Ніколенко Андрій Сергійович Насєка Віктор Миколайович Насєка Юрій Миколайович Романюк Артем Сергійович Стубров Юрій Юрійович popup.nrat_date 2020-04-02 Close