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Information × Registration Number 0214U005512, 0111U001021 , R & D reports Title Nanoscale mechanisms of the radiation-structural changes in chalcogenide vitreous semiconductors popup.stage_title Head Tsmots Volodymyr Mykhailovych, Registration Date 23-01-2014 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 Radiation-structural changes in ternary chalcogenide vitreous semiconductors (ChVSs) are investigated by using positron annihilation lifetime (PALS) and Doppler broadening of annihilation line (DBAL) methods. It is shown that PALS method is limited upon measurement errors for studying radiation-structural changes in ChVSs, while DBAL method with Gold algorithm allows a detection of radiation-structural changes in ChVSs with high confidence. It is found that decreasing the concentration of free-vole defects (voids) upon gamma-irradiation of the samples takes place for the As2S3, Ge9.5As28.6S61.9, Ge15.8As21S63.2 and Ge23.5As11.8S64.7 glasses. It is established that atomic-size model based on the coordination defects is applicable for Ge-S sub-system of the stoichiometric As2S3-GeS2 ternary system. In the case of ChVSs of the non-stoichiometric As2S3-Ge2S3 ternary system radiation-structural changes, identified for As-S sub-system, are found to be similar to that one observed in the As2S3. Product Description popup.authors Дубик Оксана Михайлівна Зайцев Олександр Вадимович Кавецький Тарас Степанович Павлюх Наталія Степанівна Паньків Ігор Степанович Паньків Людмила Іванівна Саприкін Юрій Олександрович Цмоць Володимир Михайлович popup.nrat_date 2020-04-02 Close