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Information × Registration Number 0214U005548, 0113U002791 , R & D reports Title "Radiant" is an improvement of technology of creation of semiconductor device structures popup.stage_title Head Nebesnuk O.Y., Registration Date 28-01-2014 Organization Zaporozhye State Engineer Academy popup.description2 The receipt of the high-quality systems to the semiconductor devices and IМС it is recommended to conduct annealing of contacts at a temperature 600With and to time of self-control 30 minutes. A size of transitional resistance of contacts in this case was 1,5 Ohm· .the Pin systems to silicon on the basis of Мо require the detailed research in the wide interval of temperatures at different time of self-control, thus both onecomponent and in combination with other metals. Product Description popup.authors Дмитриев В.С. Небеснюк О.Ю. Никонов А.Ю Никонова А.А. Сечин А.С. popup.nrat_date 2020-04-02 Close