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Information × Registration Number 0214U005881, 0110U005591 , R & D reports Title Complex projeсt: Mechanisms of the formation of nanostructures based on layered III-VI semiconductors. popup.stage_title Head Kovalyuk Zakhar Dmytrovych, Registration Date 26-12-2014 Organization Chernivtsi Department of the I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine popup.description2 Object of investigation - layered InSe and GaSe crystals with nanostructurized surfaces. Aim of the work - formation and investigation of nanostructurized surfaces of InSe and GaSe crystals by means of thermal intercalation, intercalation, and irradiation with high-energy electrons. The topology of both unoxidized and oxidized surfaces of layered InSe and GaSe crystals is investigated by the AFM method. It is found that the oxide surface has a nanostructurized character and consists of nanoneedles, nanorods, and nanoislands. The creation of intrinsic oxides on the surface of layered crystals enables to prepare nIn2O3 - pInSe and nIn2O3 - pIn4Se3 heterojunctions with high photoelectric parameters. For the first time it is obtained and investigated the properties of mechanically exfoliated nanolayers of InSe. It is shown that quantum-dimensional effects strongly manifest themselves in nanolayers with a thickness of several nanometers. A technology for intercalation from melts of KNO3 and RbNO3 ferroelectrics into layered InSe and GaSe crystals is developed. Because of this process we have obtained nanostructurized materials with alternating nanodimensional layers of a layer semiconductor and inserted compound. Substrates from InSe and GaSe crystals can be used for creation and investigation of nanodimensional objects by using their irradiation with high-energy particles and the parameters of these objects will be depend on energy, dose and type of irradiation. Product Description popup.authors Б.В. Кушнір Катеринчук В.М.. Кудринський З.Р. Мінтянський І.В. Нетяга В.В. Савицький П.І. Товарницький М.В. popup.nrat_date 2020-04-02 Close