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Information × Registration Number 0214U006200, 0112U006102 , R & D reports Title Fundamental characteristics and problems of diagnosis and nanowire atomically thin fild devices based on diamond, silicon and graphene popup.stage_title Head Machulin Volodymir Fedorovich, Registration Date 18-02-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of study - ultratonkoplivkovi silicon transistors , SOI , FinFETs, nanowires of silicon transistors, graphene. Purpose - The purpose of the project is to study the fundamental characteristics of one-and two-dimensional nanotranzystoriv based heterostructures on insulator and the impact on them of nanoscale effects, including the effect of size quantization , methods of electrical and optical diagnostics of devices and structures. In the first phase of work were investigated : the effect of CCD in superthin ( 15-10 nm) slightly doped silicon channel SOI MOS FETs , the mobility of the charge carriers in bahatozatvornyh devices such as FinFET rib width to 20 nm , the effect of charge on the energy capture shallow traps in the transition layer dielectrics with high dielectric constant ( such as LaSiOx and GdSiOx) and local centers in silicon dioxide on silicon tunneling distance from the channel in nanodrotovyh field devices of standard type ( inverted fashion conductivity ) and the newest type - without transitional nanodrotovyh transistors. Analytical model was developed CCD with superthin weakly doped silicon SOI MOS transistor channels based on quantum effects , which corresponds well to the numerical calculations . A theoretical model was antyhestyrezysnoho effect in the resistance layer graphene placed on ferroelectric substrate. Product Description popup.authors Лисенко В.С. Мачулін В.Ф. Назаров О.М. Руденко Т.О. Русавський А.В. Смирна В.І. Стріха М.В. Тягульский І.П. Тягульский С.І. popup.nrat_date 2020-04-02 Close