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Information × Registration Number 0214U006201, 0112U006102 , R & D reports Title Fundamental characteristics and problems of diagnosis and nanowire atomically thin fild devices based on diamond, silicon and graphene popup.stage_title Head Machulin Volodymir Fedorovich, Registration Date 18-02-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The second phase of the study was continued in charge of capturing transient layers of dielectrics with high dielectric constant (LaLuO3) and their comparison with the structures of SiO2-Si; analyzed the physical criteria and develop models to determine the threshold voltage of undoped channel nanotranzystorah and new physical based methods for experimental determination of the threshold voltage and the voltage at nanotranzystorah flat areas in nanodrotovyh bezperehidnyh transistors developed method for determining the charge carrier mobility in inverted fashion nanodrotovyh transistors using current-voltage characteristics of the device and the dependence of the amplitude of the telegraph noise drain current on gate voltage , was developed new technology for the synthesis of graphene layers from solid sources and by their structural characteristics , as well as a theory of conductivity anisotropy in dvohsharovomu graphene layer. SOI , ULTRATONKOPLIVKOVI AGENCIES, nanowires , GRAPHEME , FinFET. Product Description popup.authors Лисенко В.С. Мачулін В.Ф. Назаров О.М. Руденко Т.О. Русавський А.В. Смирна В.І. Стріха М.В. Тягульский І.П. Тягульский С.І. popup.nrat_date 2020-04-02 Close