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Information × Registration Number 0214U006230, 0111U006258 , R & D reports Title Physical fundamentals of processes of formation semiconducting nanostructures for devices of electronics and photonics popup.stage_title Head Skryshevsky Valeri, Доктор фізико-математичних наук Registration Date 19-02-2014 Organization Taras Shevchenko Kiev university popup.description2 Application of method of artifical neural networks for analysis of DLTS (deep level transient spectroscopy) in the case of single deep level in semiconductor structures has been supposed and proved in details. Modes in wich the memory devices on a base of GaAs/AlGaAs can operate, were the layes of quantum dots are placed close to the high mobility channel. A structure on a base of silicon p-n junction with interdigitated grid contacts on the rare side has been proposed for design of effective chemical sensors. A model of universal thermoelectric sensor has been worked ont which could be used to measure the velosity and expence of liquid both in stationary and pulse modes. Negative differential capacity at C-V characteristic of MIS (metal-insulator-semicnductor) structures with nanocomposite layer as a insulator in accumulation regime of near surface region of semiconductor was found. Systems of quantum dots for optoelectronics devices was shown by variation of technological parameters of GaAs deposition and temerature of Si substrate. Product Description popup.authors Іванов Іван Іванович Ільченко Володимир Васильович Вербицький Володимир Григорович Гаврильченко Ірина Валеріївна Евтух Анатолій Антонович Козинець Олексій Володимирович Кузнецов Геннадій Васильович Литвиненко Сергій Васильович Мілованов Юрій Сергійович Манілов Антон Ігоревич Марін Володимир Володимирович Опилат Віталій Яковлевич Скришевський Валерій Антонович Усенко Володимир Олексійович Циганова Ганна Іскаківна Шкавро Анатолій Григорович Шулімов Юрій Григорович popup.nrat_date 2020-04-02 Close