Search academic texts

Information × Registration Number 0214U006849, 0110U006080 , R & D reports Title Development of optoelectronic devices on multilayer epitaxial nanustructures based on SiGe, their oxides and rare earth elements popup.stage_title Head Kozyrev Yu.M., Registration Date 27-02-2014 Organization Institute of Surface Chemistry of the National Academy of Sciences of Ukraine popup.description2 Spectral and temporal dependence of longitudinal photoconductivity nanoheterostructure Si / Ge nanoislands on. Photoconductivity at T <190 K, in the spectral region where Si is transparent, due to transitions involving localized states nanoislands SiGe. It is shown that at low temperatures the most significant decrease in photoconductivity appeared in the fundamental absorption nanoislands. This demonstrates the high efficiency of recombination centers of electron-hole pairs in SiGe nanoislands. Product Description popup.authors Варавка О.В. Козирев Юрій Миколайович Мельничук Є.Є. Сидоренко І.Г. Скляр В.К. popup.nrat_date 2020-04-02 Close