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Information × Registration Number 0214U006928, 0108U004837 , R & D reports Title Development of the technology of growth of nanostructured carbonized materials and silicon carbide for opto- and microelectronics popup.stage_title Head Lysenko Volodymyr Sergiyovych, Registration Date 28-03-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 During the project period 2008-2012 following results were obtained. Manufactured and installed equipment for thermal annealing in the temperature range up to 900 ° C. Thermal treatment processes in flow of dry nitrogen , wet nitrogen , oxygen and acetylene at a temperature of 800 ° C have been developed. The computerized equipment for pulse annealing ( annealing time of 1 sec to 10 min , annealing temperature : 400-1000 ° C). The modernization of magnetron sputtering setup Katod - 1M for the deposition of amorphous silicon carbide with increased uniformity of thickness and chemical composition on the substrate up to 100 mm . Technology of protective layers of a - SiC (: H) by RF - magnetron sputtering of crystalline silicon carbide have been developed. The advantage of this method is the low temperature synthesis. Laboratory technique allows to shape the protective layers 1000 nm thick on a 100 mm diameter substrates . Layers are stable at temperature up to of 1000 ° C in an atmosphere of oxygen or water vapor. Developed and proposed a method of controlling the mechanical pressure in a hetero - structures SiC / Si and a-SiO (x) C (y) / Si with a combination of varying deposition conditions and heat treatment in an inert atmosphere and / or oxygen . Equipment for electroluminescence measurements in the range 350-750 nm in the constant voltage and constant current regime (based on monochromator DMR23) have been computerized. Technology of laboratory synthesis of photoluminescent layer SiC (x) O (y), by low-temperature oxidation films a-SiC: H have been developed. The material does not contain heavy metals and rare earth activators. Product Description popup.authors Васін А.В. Назаров О.М. Русавський А.В. popup.nrat_date 2020-04-02 Close
R & D report
Head: Lysenko Volodymyr Sergiyovych. Development of the technology of growth of nanostructured carbonized materials and silicon carbide for opto- and microelectronics. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0214U006928
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Updated: 2026-03-24