1 documents found
Information × Registration Number 0214U006964, 0113U005879 , R & D reports Title Development of technologies and devices for applying the metal contacts on the surface of single-crystal semiconductor SdZnTe and polycrystalline diamond films using a combination of high and arc plasma sources popup.stage_title Head Taran Valeriy S, Кандидат фізико-математичних наук Registration Date 16-04-2014 Organization National Science Center "Kharkiv Institute of Physics & Technology" popup.description2 Manufactured samples СdZnTe and diamond substrates , developed the technology for application to metal contacts them with combined high and arc plasma sources , and preparations based on these detectors of ionizing radiation. and production based on their radiation detectors . The electrical properties of the detectors measured current - voltage characteristics and the ability to detectors made of gamma - radiation and alfa - particles. The characteristics of single-crystal semiconductor Me / CdZnTe / Me . To make electrical contact tested metals Cu, Cr and Ni. Coating in vacuum - arc setting with high-frequency field to assisted allowed to apply coatings on dielectric samples at low temperature to 150o C. The further development of methods to reduce the dark current detectors and increase the adhesive properties of the contacts . The method allows to adjust the thickness of the various metal napilyaemih to 1.5 microns. In addition , it gives the opportunity to increase the adhesion and continuity and achieve a high pore-free coatings compared with a conventional method of creating contact from a solution by chemical precipitation . Investigated by CVC and amplitude distribution of the signal detectors of polycrystalline CVD diamond films by irradiation with alpha particles . For this purpose, the surface contacts with the workpieces napilyuvalisya Cr. Thus were obtained with the detector ohmic contacts and low values of leakage currents .5481 Product Description popup.authors Вєрьовкін А.А. Губарєв С.П. Клосовський А.В. Красний В.В. Кутній В.Є. Муратов Р.М. Наконечний Д.В. Незовибатько Ю.Н. Опалєва Г.П. Рибка О.В. Таран В.С. Тимошенко О.І. Швец О.М. Щебетун А.В. popup.nrat_date 2020-04-02 Close
R & D report
1
Head: Taran Valeriy S. Development of technologies and devices for applying the metal contacts on the surface of single-crystal semiconductor SdZnTe and polycrystalline diamond films using a combination of high and arc plasma sources. (popup.stage: ). National Science Center "Kharkiv Institute of Physics & Technology". № 0214U006964
1 documents found

Updated: 2026-03-23