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Information × Registration Number 0214U007570, 0109U006061 , R & D reports Title Development and creation of methods to control geometric sizes of production of high-temperature metallurgical processes popup.stage_title Head Shutov Stanislav Victorovich, Registration Date 05-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The purpose of the work is to develop the methods and equipment allowing to control automatically the diameter of ingots of strongly doped semiconductors and decomposing semiconductor compounds by using optical and television techniques. Analytic relation for the magnitude of uncontrollable fluctuations of the diameter of ingots of semiconductors and decomposing semiconductor compounds during Czochralski pulling from melt is obtained as a first approximation. Technical requirements to wide-range photosensitive elements of automatic diameter control system (WPE ADCS) able to cover practically the whole range of temperatures of oriented crystallization of basic industrial semiconductor materials (Si, GaAs, InAs and etc.) as well as metals and alloys have been worked out. An experimental technique of fabrication of avalanche photodiodes based on InxGa1-xAs/InP heterostructures for WPE ADCS has been developed. Structure functional scheme of optical module of the sensor system as well as technical solutions of its realization have been developed. General specifications and parameters of the optical module have been determined, worked through, tested and refined using prototyping sample of the module. Structure functional scheme of electronic module, schemes of units and submodules have been developed based on two-level architecture of control unit of the sensor system, specifications and parameters of the electronic module have been determined. The following techniques have been developed and implemented into the sensor system software and hardware: the technique of diameter control of solar silicon ingots; the technique of software and hardware control of GaAs and InAs ingots in the process of Czochralski pulling; the technique of software and hardware control of wire diameter of Al and Cu alloys as well as pure metals. Complex technical and technological tests of software and hardware means and techniques within the sensor system developed in the processes of diameter control of solar Si, GaAs, InAs ingots during Czochralski pulling from melt as well as during crystallization and forming conducting wires from Al and Cu alloys have been realized. The results of this work will allow to create high precision systems and equipment for the size control of ingots and other workpieces of such semiconductor materials crystallizing by Czochralski method as well as similar systems for the size control of forming workpieces from metal alloys. ORIENTED CRYSTALLIZATION OF SEMICONDUCTORS, METALS AND ALLOYS, SYSTEMS OF AUTOMATIC DIAMETER CONTROL OF INGOTS, WIDE-RANGE PHOTOSENSITIVE ELEMENTS. Product Description popup.authors Єрохін С. Ю. Деменський О. М. Краснов В. О. popup.nrat_date 2020-04-02 Close