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Information × Registration Number 0214U007571, 0109U006060 , R & D reports Title Development and manufacturing of thermophotovoltaic generators popup.stage_title Head Shutov Stanislav Victorovich, Registration Date 05-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The purpose of the project is development and creation of new cost-effective technological and design solutions of manufacturing constituent elements of thermophotovoltaic systems for IR radiation conversion into electric energy. The basics of new experimental technique of obtaining polycrystalline gallium antimonide and other III-V compounds are developed; pilot samples of the device structures of thermophotovoltaic (TPV) convertors based on p-n GaSb structures are fabricated. Improved repeatability of characteristics of the layers is confirmed experimentally (on Ga-GaSb system) using the technique developed, it has been shown that the thin-film structures obtained are suitable for creation low-cost efficient thermophotovoltaic convertors. The basics of fabrication technique of SiC-based emitters by using mix material of different composition for providing minimum thermal expansion coefficient of the ceramics up to 1.0 3.0 10-6 oC-1 and selective filters based on ITO (SnO2:In2O3)-Si, SnO2-Si are worked out. Technological equipment for obtaining of thin-layer structures of low-cost TPV-convertors is developed. The technological methods of obtaining of the material and the intermediates for fabrication of the pilot samples of emitter of TPV-generator based on a composite material Al/SiC/B2O3 are proposed and implemented. The technique of fabrication of the selective filter based on SiO2 and the coatings consisting of SnO2 or SnO2/In2O3 Sb-doped layers by the method of pyrolytic spraying is worked out. The basics of technology of manufacturing of TPV-convertors based on polycrystalline GaSb p-n structures are developed. The technological modes of the ohmic contacts formation for minimization of specific transient contact resistance (up to 10-6 Ohm cm2) based on Ti-Pt-Ag layers are worked out and the influence of thermal treatment in gaseous medium on the characteristics of contacts of the TPV-convertor based on p-n GaSb-structure. It has been shown that the maximum efficiency of the TPV system is achieved when GaSb-convertors are located cylindrically around the emitter along with usage of the selective filter SiO2/SnO2/In2O3(Sb) providing the return of "sub band" photons ( >1.8 m) back to the emitter and it makes 19%. The practical value of the project is that the utilization of some part of the IR radiation spectra of high-temperature technological processes by converting it into electricity will allow both to save conventional energy sources as well as to improve the working conditions, to minimize the ecological effect of the heat radiation dissipation into the environment. The results of this research project could be applied in the following fields: electronic industry, environmental protection, science, medicine. THERMOPHOTOVOLTAIC CONVERTORS, GaSb STRUCTURES, ITO (SnO2:In2O3)-Si, SnO2-Si, SELECTIVE FILTER SiO2/SnO2/In2O3(Sb). Product Description popup.authors Деменський О. М. Краснов В. О. Марончук О.І. Цибуленко В.В. popup.nrat_date 2020-04-02 Close