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Information × Registration Number 0214U008009, 0109U004031 , R & D reports Title Development and creation of the technology for the production of sapphire substrates of semiconductor purity for light-diode structures popup.stage_title Head Budnikov Aleksandr Timofeevich, Registration Date 14-05-2014 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The substrates with nanostructured surface in the form of terrace-stepwise structure with a period of 40-2000 nm and a roughness of 0.2-0.5 nm, were obtained. Developed were the methods of mechanical and chemical cleaning of the substrate surface for thermochemical nitridation. The sapphire substrates with nanostructured surface were nitridated.There were obtained 001)AlN/(0001)Al2O3 templates with perfect structture and 1 mcm deep nitride layer with a roughness of 3-5 nm and a halfwidth of the diffraction curve of 15'-30'. Product Description popup.authors Вовк Олена Олександрівна Ніжанковський Сергій Викторович popup.nrat_date 2020-04-02 Close