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Information × Registration Number 0214U008016, 0108U004834 , R & D reports Title Development and creation of technologies for production of low-temperature silicon compounds for use in microelectronic sensors. popup.stage_title Head Mitin Vadym Fedorovych, Registration Date 19-05-2014 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The making technology of the SiО2/Si nanostructures by using various methods (silicon thermal oxidation at various temperatures, its electrolytic and anisotropic etching and neutron irradiation) was developed. The SiО2/Si nanostructures were fabricated using the hydrogen plasma treatment of silicon substrates before deposition. The features their physical properties (the existence of intrinsic electrical fields and quantum-size effects, the change of mechanical stresses and interface) were defined. Product Description popup.authors І.Ю.Неміш В.В.Мітін В.В.Холевчук Л.А.Матвеєва О.С.Кулик О.Ю.Колядіна П.Л.Нелюба popup.nrat_date 2020-04-02 Close