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Information × Registration Number 0214U008232, 0114U002677 , R & D reports Title The development of plasma nanotechnology of the nanostructured aluminium and boron nitrides layers deposition for microwave devices surface protection popup.stage_title Head Zayats Mykola Sergiyovich, Registration Date 24-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 By reactive magnetron sputtering respective targets (set to "Cathode 1M") made experimental samples of nanostructured layers of BN and AlN, which are formed on wafers of silicon, quartz, sapphire and other materials, and conducted a comprehensive testing of their parameters. Adjustment is made to technological modes of low-temperature plasma deposition of nanostructured layers for the formation of BN and AlN with the necessary structural and morphological, optical and electrical properties for practical use (for details of these procedures are currently being studied and may be the subject of know-how). The upgraded plant "Cathode 1M" allows one process cycle to produce multilayer structures with desired functional characteristics required for the manufacture of devices modern electronic and optoelectronic equipment. Product Description popup.authors В.Б. Лозінський В.Г. Бойко Д.С. Гавриков М.І. Клюй М.О. Семененко М.С. Заяць О. М. Кабалдін С. М. Заяць popup.nrat_date 2020-04-02 Close