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Information × Registration Number 0214U008246, 0113U004863 , R & D reports Title High-resolution X-ray diagnosis of 1-dimensional planar GaN nanostrutures on silicon substrates popup.stage_title Head Kuchuk Andrian Volodimirovich, Registration Date 25-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 This paper presents the results of studies of structural perfection of epitaxial GaN structures grown on Si (111) substrate. Structural diagnosis were carried out by high-resolution X-Ray diffraction, scanning electron microscopy and atomic force microscopy. The effect of buffer layers on and dysllokatsiynyy deformation of thin epitaxial GaN films on Si (111). Experimentally and theoretically investigated the effect of temperature Nitridation of Si (111) substrate size, orientation and deformation state sun GaN. Using scanning electron microscopy investigated the morphology and structural features of GaN / ND-GaN / Si nanostructures. Product Description popup.authors Поліщук Юлія Олегівна Станчу Григорій Вікторович popup.nrat_date 2020-04-02 Close