Search academic texts

Information × Registration Number 0214U008495, 0113U003252 , R & D reports Title Processing of the deposition and etching of nanodimension ferroelectric films end electrode layers popup.stage_title Head Yuriychuk Ivan Mykolayovych, Registration Date 25-12-2014 Organization Yuri Fedkovych Chernivtsi National University popup.description2 Ion-plasma sputtering method has been used and optimized for preparation of ultrathin ferroelectric films of lead zirconate titanate (PZT) for ferroelectric memory cells in ferroelectric thin-film random access memory (FRAM) devices. Formation of Co - Ni mixed oxide electrodes for PZT-based ferroelectrric capacitors by ion-plasma deposition instead SrRuO3 electrodes allowed to decrease of cost of memory cells production. It was demonstrated that nanocrystalline ferroelectric PZT films with low switching voltage at the range of 0,8V - 1.2V may be integrated in Si-based electronic technology. Product Description popup.authors Клето Геннадій Іванович Обедзиньський Юрій Костянтинович Стребежев Володимир Вікторович Юрійчук Іван Миколайович popup.nrat_date 2020-04-02 Close