Search academic texts

Information × Registration Number 0214U008830, 0108U002445 , R & D reports Title Development and creation of diagnostic complex for testing of microwave diodes on the basis of wide-gap semiconductors. popup.stage_title Head Konakova Raisa Vasilevna, Registration Date 07-11-2014 Organization V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2 Scientific report consists of an introduction, four parts and conclusions. The report 118 typescript pages, including 110 pages of main text, 52 illustrations, 2 tables and link list of 121 names. The object of this work is the study of methods of diagnosing microwave diodes based on wide-gap semiconductors and thermal resistances of optoelectronic products. The aim is to develop diagnostic systems for the analysis of microwave Gunn diodes, pin and avalanche-transit diode and development of diagnostic tests for complex thermal resistance of power LEDs. In the course of research conducted patent searches to create devices for measuring the thermal resistance of semiconductor diodes, including LEDs, from which developed the diagnostic complex for measuring the thermal resistance of semiconductor diodes and optoelectronic products. A model of complex diagnostic tests for thermal resistance diodes working on the line branch of the CVC output parameters: - Voltage range 0 - 10 V; - Current range: 0 - 10 A; - Pulse duration range: 10-5 - 103 s; - Temperature range 100 - 400 K. Tested in a model experiment to test the diagnostic complex thermal resistance microwave diodes, including LEDs. Result was applied for a patent. Keywords: Gunn, avalanche-transit diode, pin diode, heat resistance, sitlodiod, diagnostic system Product Description popup.authors В.В. Шинкаренко В.М. Шеремет Р.В Конакова Я.Я. Кудрик popup.nrat_date 2020-04-02 Close