Registration Number
0214U008831,
0108U002445
, R & D reports
Title
Development and creation of diagnostic complex for testing of microwave diodes on the basis of wide-gap semiconductors.
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Head
Konakova Raisa Vasilevna,
Registration Date
07-11-2014
Organization
V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
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Scientific and technical report consists of an introduction, five parts, conclusions and three appendices. The report has 143 pages of typescript, including 130 pages of main text, 59 figures, 4 tables and a list of links to 131 names. The object of this work is the study of methods of diagnosing microwave diodes based on wide-gap semiconductors and thermal resistances of optoelectronic products. The aim is to develop diagnostic systems for the analysis of microwave Gunn diodes, pin and avalanche-transit diode and development of diagnostic tests for complex thermal resistance of power LEDs. The results of the developed, manufactured and tested in the experiment layout diagnostic complex to measure static and pulsed current-voltage characteristics, methods for the analysis of the measured current-voltage characteristics of Gunn diodes, avalanche-transit diodes, pin diodes, and software for them. Have been designed, manufactured and tested in experiments diagnostic complex model to measure the thermal resistance of LEDs, and developed software for analysis of thermal parameters of LEDs. Keywords: Gunn, IMPATT diode, PIN diode, heat resistance, LED, diagnostic system
Product Description
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В.В. Шинкаренко
В.М. Шеремет
В.С. Сліпокуров
Р.В Конакова
Я.Я. Кудрик
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2020-04-02
