Registration Number
0214U008905,
0110U006270
, R & D reports
Title
Research and development of ion-plasma technologies for formation of silicon composites at introduction of stimulating self-organization processes impurites.
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Head
Evtukh Anatoliy Antonovych,
Registration Date
10-12-2014
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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The aim of the Project: Research and development of ion-plasma technology of silicon nanocomposites formation at injecting the impurities stimulating the self-organization of the same size silicon nanocrystals in dielectric matrices for use in nanoelectronics and optoelectronics. As a result of this project the following results have been used: 1. The ion-plasma technology of reproducible formation of thin silicon-rich SiOx (x <2) films with different predetermined excess of silicon content has been developed. Content of SiOx film is set by O2 / Ar gas ratio in the ion-plasma sputtering of the silicon target process. 2. The basic laws of self-organizing processes of Si nanoclusters in SiO2 dielectric matrix formation by high temperature annealing have been determined. The changeable parameters were thermal annealing temperature (T = 800 - 1100 C) and gas environment (Ar, N2). It was shown that annealing at temperatures of 800-1000 C don't cause the complete phase separation in SiOx films, they consist of phases SiOx, SiO2 and silicon. Silicon content depends on the annealing temperature and the initial value of the stoichiometry index x. 3. Ion-plasma technology of oxynitride thin films (SixOyNz) formation with varying silicon content has been developed. The content of the SixOyNz films is given by the O2 / N2 / Ar gase ratio at the t ion-plasma sputtering of a silicon target. 4. Dependences of the nanocrystals size, their surface density and composition of the dielectric matrix on technological processes of ion-plasma sputtering and high-temperature annealing parameters have been determined. 5. The basic mechanisms of electron transport and charge accumulation in SiOx and SiO2(Si) films and multilayer structures based on them have been determined. The main mechanism of electron transport through the nanocomposite SiO2(Si) film is hopping mechanism with variable-length jump (Mott mechanism). The negative differential capacitance and dependences of the maximum capacity of the MIS structure with SiO2(Si) film on the frequency of testing signal and linear voltage sweep speed in case of the semiconductor surface accumulation have been revealed. The value of the MIS structure maximum capacity increases with the decreasing of the testing signal frequency and increasing of the sweep speed of the line voltage. 6. It has been established that obtained by ion-plasma sputtering SiO2(Si) film in MIS structures is an effective medium for the accumulation of charge and can be used in nanocrystalline nonvolatile memory elements.
Product Description
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Євтух Анатолій Антонович
Братусь Олег Леонідович
Кизяк Анатолій Юрійович
Педченко Юрій Миколайович
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2020-04-02
