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Information × Registration Number 0215U000609, 0114U001984 , R & D reports Title Development of methods for the study of contact systems of powerful light-emitting diodes using N(III) heterostructures with elements from third group popup.stage_title Head Konakova Raisa Vasiljevna, Vlasenko Alexandr, Registration Date 10-03-2015 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 І. LED modules (before deposition of luminophore) were constructed by ukrainian technology based on «Seoul Semiconductor» chips. It were tested at current 300 mA during 9060 hours. First test was at temperature 37 C of LED heat sink during 6800 hours. Second test was at temperature 50 C of LED heat sink during 2260 hours. Luminosity of LED modules was decreased on 5,6 % during all experiments time. Exponential function was used for luminosity of LED modules approximation. It was calculated all parameters of such function, and was predicted degradation of LED modules in work temperature range of heat sink. ІІ. For express and informing diagnostics of power LED the express-method of control of electric active defects was developed for the InGaN/GaN heterostructures. It is based on the radiation of microplasmas at reverse voltages, as ionization and subsequent recombination of carriers, which is accompanied luminescence, takes place on the defects. A method is non-destructive and allows to visualize critical extended defects.5481 Product Description popup.authors Велещук В.П. Киселюк М.П. Кудрик Я.Я. Сліпокуров В.С. Шинкаренко В.В. popup.nrat_date 2020-04-02 Close