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Information × Registration Number 0215U000784, 0111U006176 , R & D reports Title Investigation of electro-physical, mechanical, thermal and optical properties of semiconductors, semiconductor and metallic films. popup.stage_title Head Tulupenko Victor N., Registration Date 19-05-2015 Organization Donbass State Engineering Academy popup.description2 Object of study: Si0.8Ge0.2/Si/Si0.8Ge0.2 quantum well, doped with Phosphorus and grown in 100 crystallographic direction. The aim is to calculate the impurity binding energy inside a Si0.8Ge0.2/Si/Si0.8Ge0.2 quantum well with a considering background doping at barriers. Subject of investigation - change of the impurity binding energy in delta-doped quantum wells due to ionization of the impurity delta-layer and background impurities at barriers. Method - self-consistent solution of the Schrdinger and Poisson's equations and the equation of electrical neutrality. In this work the influence of the location of the impurity atom on the impurity binding energy in the case of delta-doped Si0.8Ge0.2/Si/Si0.8Ge0.2 quantum well is studied theoretically. The impurity binding energy in the quantum wells was calculated allowing for a considering background impurity in the barriers as well as without it. It is shown that with increasing temperature Hartree's potential created by the free electrons and ionized impurity atoms in the delta layer superimposed with the energy profile of the quantum well formed by the heterojunctions. The strongest distortion of energy profile observed at the case of a background impurities in the barrier. The result is a new quantum well with a new set of energy subbands and different value of the impurity ionization energy. Calculations were performed for the case of low enough concentrations of impurities in the delta layer for the impurity atoms to be isolated. It was shown that the impurity binding energy depends on the degree of ionization of the impurity in the delta-layer, the greatest effect is observed in the case of doping in the edge of the quantum well. In the case of background impurities in the barriers ionization energy is dependent on the concentration of background impurities. It is shown that the change in the energy spectrum of the quantum well can be used to create new optical devices (optical modulators). Product Description popup.authors Акімов Володимир Ігорович Білих Валерій Георгійович Васильєва Ірина Вікторівна Демедюк Роман Олександрович Дмитриченко Татьяна Вікторівна Рижков Павло Віталійович Тулупенко Віктор Миколайович Тютюнник Антон Михайлович Фоміна Оксана Сергіївна popup.nrat_date 2020-04-02 Close