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Information × Registration Number 0215U001121, 0112U000560 , R & D reports Title Psysical phenomena in variband Gunn diodes to the mm- and a submm of ranges with a static domen and shock ionising popup.stage_title Head Arkusha Yuriy, Registration Date 21-01-2015 Organization Kharkov National University named after V.N. Karazin popup.description2 The object of study - the generation of electromagnetic waves by complex graded A3B5 semiconductors based devices operating on the transfer electron effect (TEE) with account of impact ionization. Purpose - to study of the physical processes associated with the TEE, impact ionization and other transport phenomena in the graded A3B5 semiconductors for prediction and creating of a new semiconductor devices. The method of investigation - numerical simulation by using three temperature model of graded semiconductor based devices with TEE and band to band impact ionization. Main results and their novelty: 1. In this project, the TEE device mathematical model incorporating of a band to band impact ionization and parameters to coordinate dependence of the graded semiconductor has been proposed. 2. The following new effects and their physical nature in the graded devices have been founded and explained: - the emergence of electric domains in a uniformly doped graded devices, in devices with concentration of neutral impurity and potential alloy or a percentage of the binary components in multicomponent compounds decreasing with increasing of coordinate - the graded Alx(z) Ga1-x(z) As-GaAs-Ga0,6In0,4As based Gunn diodes (GD) to be perspective has been determined. 3. The conditions of arise of static domains in uniformly doped graded semiconductors have been determined. 4. The current-voltage characteristics of the AlxGa1-xAs-GaAs based devices with a smooth heterojunction and different doping profile have been obtained. 5. It is shown that the impact ionization do not affect to output power, efficiency and generating frequency of the devices. Degree of implementation: obtained materials have been used in the educational process at the Department of Physical and Biomedical Electronics and integrated information technology of V. N. Karazin Kharkiv National University. Recommendations on the use of performance: - The practical importance of the results lies in the fact that they have a fundamental character and provide an opportunity to begin the study of impact ionization and the noise generation in graded-gap semiconductors based devices. - Results of the application of graded semiconductors BInN, BGaN, BAlN, AlGaInAs and AlInPAs in the GD and devices with static domain are new and still have no analogues. Product Description popup.authors Анікіна К. Коробов А. Коробов В. Сарвір А. Стороженко І. Шамота І. Ярошенко О. popup.nrat_date 2020-04-02 Close