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Information × Registration Number 0215U001233, 0113U001249 , R & D reports Title Desing of high-quality electronic measuring devices of temperature with semiconductor touchcontrols on the base of silicic p-n transitions popup.stage_title Head Pavlyk Bogdan, Registration Date 03-02-2015 Organization Ivan Franko National University of Lviv popup.description2 The results of theoretical and experimental studies obtained during the course of research work can be divided into four points. - X-rays irradiation of transistor thermosensor results in percolation number of competing processes: activation of existing fast surface states, ordering of the defect structure, the generation of radiation defects in the subsurface layer and the bulk of the semiconductor; -The consequence of reconfiguration of defects are changes of current-voltage and capacitance-voltage characteristics of diode structures that point to improve of the structural perfection of transition; -Holding-off diode structures in a constant magnetic field (B <1 T) stimulates the conversion of some of the structural defects in a metastable state, which is sensitive to other external factors; -The thermal annealing and the time relaxation of irradiated thermosensor transistors (D <5000 Gy) reduces their sensitivity to subsequent radiation. The physical model of interaction processes of structural and radiation defects in Si single crystals was proposed. The basis of this model is that the alteration of metastable defects in the bulk and the subsurface semiconductor layer after the irradiation. Solving the problem of reducing the concentration of electrically active defects or increase their stability through the transition of defects from the metastable state to the stable state, will improve the performance of solid-state electronics devices. The resulting scientific and practical results form the basis for making competitive devices based on sensors with improved performance and metrological characteristics. Product Description popup.authors Грипа Андрій Сергійович Дідик Роман Іванович Кушлик Маркіян Олегович Лис Роман Мирославович Павлик Богдан Васильович Слободзян Дмитро Петрович Шикоряк Йосип Андрійович popup.nrat_date 2020-04-02 Close
R & D report
Head: Pavlyk Bogdan. Desing of high-quality electronic measuring devices of temperature with semiconductor touchcontrols on the base of silicic p-n transitions. (popup.stage: ). Ivan Franko National University of Lviv. № 0215U001233
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Updated: 2026-03-27