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Information × Registration Number 0215U001796, 0111U006258 , R & D reports Title Physical fundamentals of processes of formation semiconducting nanostructures for devices of electronics and photonics popup.stage_title Head Skryshevsky Valeri, Доктор фізико-математичних наук Registration Date 19-05-2015 Organization Taras Shevchenko Kiev university popup.description2 The spin-dependent effects in test structures with deep centers, which concentration is more than an order of magnitude greater than in plastically deformed silicon was observed. Methods of admittance spectroscopy allowing determining the parameters of the local levels in device with Si nano clusters in dielectric films SiO2 was proposed. It is proved that the phenomenon of surface recombination in the semiconductor, displaying chemical and adsorption processes at the interface can be a key step in the transformation of information about this substance into electrical signals. The technology of producing nano composite structures Si+SiO2 and Si+TiO2 was proposed. Transport mechanisms in these structures are determined by the properties of silicon nano crystals and interaction processes at the grain boundaries. Technological processes of producing oxynitride films by thermal growth in N2O. Embedding nitrogen in oxynitride film results in the formation of electron traps, which are additional charge trapping centers. GaAs/Si heterostructures with quantum dots exhibit long-term kinetics of the photocurrent and the effect of the residual conductivity. Product Description popup.authors Іванов Іван Іванович Ільченко Володимир Васильович Вербицький Володимир Григорович Гаврильченко Ірина Валеріївна Евтух Анатолій Антонович Козинець Олексій Володимирович Литвиненко Сергій Васильович Мілованов Юрій Сергійович Манілов Антон Ігорович Марін Володимир Володимирович Опилат Віталій Яковлевич Скришевський Валерій Антонович Усенко Володимир Олексійович Циганова Ганна Іскаківна Шкавро Анатолій Григорович Шулімов Юрій Григорович popup.nrat_date 2020-04-02 Close