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Information × Registration Number 0215U003761, 0110U006709 , R & D reports Title Diagnostics and modeling of charge transport mechanisms in nanoscaled crystal and amorphous layers of rare-earth oxides and formation of electronic states at their interface with semiconductors of IV group and A3B5 popup.stage_title Head Lysenko Volodymir, Registration Date 24-03-2015 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 It is shown that current in the structures "Gd2O3-Si" and "Nd2O3-Si" is governed with Mott variable range hopping mechanism. The concentration is determined of deep centers related to oxygen vacancies that always are present on ionic metal oxides. For the gate stack "Pd - Al2O3" at the surface of narrow band gap semiconductor In0.53Ga0.47As and at oxide thickness more than 5 nm the current is determined by Fowler-Nordheim tunneling mechanism, reflecting sufficiently high interface quality. Product Description popup.authors Гоменюк Юрій Вікторович Гоменюк Юрій Юрійович Назаров Олексій Миколайович popup.nrat_date 2020-04-02 Close
R & D report
Diagnostics and modeling of charge transport mechanisms in nanoscaled crystal and amorphous layers of rare-earth oxides and formation of electronic states at their interface with semiconductors of IV group and A3B5
Head: Lysenko Volodymir. Diagnostics and modeling of charge transport mechanisms in nanoscaled crystal and amorphous layers of rare-earth oxides and formation of electronic states at their interface with semiconductors of IV group and A3B5. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0215U003761
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Updated: 2026-03-25


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