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Information × Registration Number 0215U003911, 0112U003268 , R & D reports Title The patterns of the combined effect of external factors on the properties of surface layer of p-Si and silicon temperature sensors popup.stage_title Head Pavlyk Bogdan, Registration Date 18-06-2015 Organization Ivan Franko National University of Lviv popup.description2 The results of theoretical and experimental studies obtained during the course of research work can be divided into four points. -Holding off diode structures in a constant magnetic field (B <1 T) stimulates the conversion of some of the structural defects in a metastable state, which is sensitive to other external factors;- X-rays irradiation of transistor thermosensor results in percolation number of competing processes: ordering of the defect structure, activation of existing fast surface states, the generation of radiation defects in the subsurface layer and the bulk of the semiconductor; -The consequence of reconfiguration of defects are changes of current-voltage and capacitance-voltage characteristics of diode structures that point to improve of the structural perfection of transition. The physical model of interaction processes of structural and radiation defects in Si single crystals was proposed. The basis of this model is that the alteration of metastable defects in the bulk and the subsurface semiconductor layer after the irradiation. Solving the problem of reducing the concentration of electrically active defects or increase their stability through the transition of defects from the metastable state to the stable state, will improve the performance of solid-state electronics devices. The resulting scientific and practical results form the basis for making competitive devices based on sensors with improved performance and metrological characteristics. Product Description popup.authors Лис Роман Мирославович Матвіїшин Ігор Михайлович Павлик Богдан Васильович Слободзян Дмитро Петрович popup.nrat_date 2020-04-02 Close