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Information × Registration Number 0215U007119, 0114U002569 , R & D reports Title Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices popup.stage_title Head Venger Evgeniy Fedorovych, Registration Date 09-02-2015 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used for this investigation. It was found the possibility to obtain thin nanoheterogeneous monocrystalline dislocation-free films with low intrinsic mechanical stresses and two-dimension percolation-type conductivity, nanorelief surface, as well as high temperature sensitivity that can be used for IR and electronics technologies.5481 Product Description popup.authors Є.Ф.Венгер І.Ю.Неміш В.В.Мітін В.В.Холевчук В.Ф.Мітін Л.А.Матвєєва О.С.Забродська popup.nrat_date 2020-04-02 Close
R & D report
Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices
Head: Venger Evgeniy Fedorovych. Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0215U007119
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Updated: 2026-03-22


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