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Information × Registration Number 0215U007216, 0110U006230 , R & D reports Title Invesetigation of optical properties and tunnel processes of carriers (excitons) in two-phases semiconductors nanosystem of type "core@shell" C1@C2 (С1 = SiO2, C2 = ZnO, CdS, ZnSe, ZnS and other) that are promising blocks for materials of nanophysics and electronics. popup.stage_title Head Brodyn M.S., Registration Date 18-02-2015 Organization Institute of physics NASU popup.description2 The purpose of work is study features of the formation a phase percolation transition of carriers (excitons) and his the occurrence in the optical spectra of obtained samples. It is first both the theoretically substantiated and experimentally supported that the quantum size effect of carriers and excitons in a space-limited structures of large dielectrical spheres depends on a form which takes of quantum objects under the action of the surface energy and very weakly depends on his size (radius or diametr). It is provides tranformed of the spheric dielectrical objects in both conducting and quantum structures large sizes what, unlike the nanometer quantum sizes of II - VI semiconductors, easy manipulated produce of the resourse base for the divice of a nanophysic. In the view of a phase transitions this systems imagined as the films of mixtures of pure the dielectrical spheres and covered of the semiconductor quantum dots is amond the first microstructures fot the study of the continuum percolation model of carriers and excitons, where the phase transitions can be calculated and compare with the experimental data. One of the future goals is a improvement of the technology obtaining of films from of the dielectrical spheres with semiconductors quantum dots. This has given of a possibility grown of the 3D - structures with the modulate dielectrical constant, which is of the foundation of the fotonic crystals - the objects that given of a possibility drive of the light currents, as they has of the band structure as the crystal semiconductors. To date we update of the technology processes of to obtaine of this structures at the expense of the selection of the appropriate of acsids. It is given an opportunity essentially decreasing of the size variance of a SiO2 spheres and amount of the surface defects that distorted of the crystal structures of quantum dots. Product Description popup.authors Бондар Микола Володимирович Бродин Михайло Семенович Матвєєвська Неоніла Анатолієвна Толмачов Олександр Володимирович popup.nrat_date 2020-04-02 Close