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Information × Registration Number 0215U007674, 0113U001971 , R & D reports Title Development of a new rapid technology of preparation semiconductor nuclear radiation detectors and their production for nuclear experiments popup.stage_title Head Litovchenko Petro Grygorovych, Registration Date 18-12-2015 Organization Institute For Nuclear Research Of National Academy Of Sciences Of Ukraine popup.description2 The electrical and structural properties of high-resistivity detector silicon were investigated; the influence of surface electron processes on the formation of surface-barrier structures was found. The basic requirements for the properties of high-resistance silicon, suitable for the manufacturing of detectors with different thickness of sensitive area (from tens of microns to several millimeters) and various working area of the incoming "windows" were determined. The regimes of chemical surface treatments of Si-crystals with using of different compounds of etchants for the accelerated creation of high-quality surface-barrier detector structures were worked out. The slow regimes of the etching for dЕ/dx-detectors of the plane-parallel geometry were developed. Product Description popup.authors Барабаш Л. І. Бердниченко С. В. Варніна В. І. Воробйов В. Г. Кібкало Т. І. Кочкін В. І. Ластовецький В. Ф. Макуха О. М. Полівцев Л. А. Старчик М. І. Тартачник В. П. popup.nrat_date 2020-04-02 Close