Search academic texts

Information × Registration Number 0215U007676, 0113U001971 , R & D reports Title Development of a new rapid technology of preparation semiconductor nuclear radiation detectors and their production for nuclear experiments popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 18-12-2015 Organization Institute For Nuclear Research Of National Academy Of Sciences Of Ukraine popup.description2 The electrical and structural properties of high-resistivity detector silicon were investigated; the influence of surface electron processes on the formation of surface-barrier structures was found; the basic requirements for the properties of high-resistance silicon, suitable for the manufacturing of detectors with different thickness of sensitive area (from tens of microns to several millimeters) and various working area of the incoming "windows" were determined; the regimes of chemical surface treatments of Si-crystals with using of different compounds of etchants for the accelerated creation of high-quality surface-barrier detector structures were worked out; the slow regimes of the etching for dЕ/dx-detectors of the plane-parallel geometry were developed. The technology of more rapid drift of lithium ions and the effective regimes of levelling drift for obtaining of highly compensated i-material in the p i n-structures were worked out. The drift of the lithium ions on the considerable depths in the silicon was optimized. The influence of the micro-defects and distribution of the oxygen in silicon on the mobility of lithium ions in the process of drift was investigated. One-off technological regulation of the manufacturing process of Si(Li) planar type detectors with a thickness of the sensitive area of more than 3 mm was worked out. Based on the high-resistance neutron-doped silicon the detectors with increased stability of parameters were manufactured for the spectrometry of nuclear radiation. The detectors of the following types were designed and manufactured for use in nuclear physics experiments: Е-detectors of the total absorption of energy of the charged particles with a wide range of thicknesses of the sensitive area; dЕ/dx-detectors of the specific energy losses of charged particles with thickness of the sensitive area of about ten microns; Si(Li) drift-detectors on the based of silicon compensated with lithium. Product Description popup.authors Барабаш Л. І. Бердниченко С. В. Варніна В. І. Воробйов В. Г. Кібкало Т. І. Кочкін В. І. Ластовецький В. Ф. Литовченко П. Г. Макуха О. М. Полівцев Л. А. Старчик М. І. Тартачник В. П. popup.nrat_date 2020-04-02 Close