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Information × Registration Number 0215U008500, 0114U003702 , R & D reports Title The development of methods for precision X-ray diffractometry of deformation states of epitaxial nanostructures with A3B5/ A2B6 heterovalent transitions popup.stage_title Head Fodchuk Igor Mykhaylovych, Доктор фізико-математичних наук Registration Date 25-12-2015 Organization Yuri Fedkovych Chernivtsi National University popup.description2 Enhanced and greatly complements the existing experimental and theoretical methods of multiwave diffraction of X-rays and electrons for precise diagnostics fields epitaxial strains in heterostructures and structures of the heterojunction based on A3B5 and A2B6. Analyzed and used by a variety of effects of multi-wavelength X-ray diffraction and synchrotron radiation for the simultaneous determination of changes in the interplanar distances in different crystallographic directions with minimal errors. Structural abnormalities in epitaxial nanoheterostructures at interfaces heterovalence transitions measured depth of mixing heterointerface GaAs / ZnSe, quantifying point and bulk defects in heterostructures (In, Al) Gaas, InAs, and GaP with epitaxial layers and the interrelation between their structural and electrical properties. Athermal conducted to monitor the impact of changes in strain epitaxial nanoheterostructures that partially change the ratio and volume of point defects and to improve the structural quality materials. These data were used to validate the developed simulation of multi-wavelength X-ray diffraction and validity of theoretical and experimental assumptions that lie at its core. Product Description popup.authors Борча Мар'яна Драгошівна Гуцуляк Іван Іванович Довганюк Володимир Васильович Каземірський Тарас Анатолійович Кладько Василь Петрович Литвинчук Іван Васильович Новіков Сергій Миколайович Федорцов Дмитро Георгійович Фодчук Ігор Михайлович popup.nrat_date 2020-04-02 Close