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Information × Registration Number 0216U000962, 0113U000312 , R & D reports Title Transparent electroconductive films based on doped ZnO with higher radiation resistance for photovoltaic devices popup.stage_title Head Lashkarev Geogiy Vadimovich, Доктор фізико-математичних наук Registration Date 21-03-2016 Organization I.N.Frantsevich Institute for Problems of Materials Science of NAS of Ukraine popup.description2 The work presents results of growth aluminum doped zinc oxide films depending on technological parameters. The technological conditions for the growth of transparent conductive films ZnO:Al with electrical resistivity of 6·10-4 Ohm·cm and transparency over 85 % were determined. The conditions of formation of Zn1-xCdxO and ZnO1-xSx solid solutions, modeling their band spectrum as well as engineering of quantum wells ZnO/Zn1-хCdхO/ZnO were studied. The effect of high energy heavy ions and electrons impact on the structure, optical and electrical properties of ZnO films was studied. Product Description popup.authors Євтушенко Арсеній Іванович Асоцький Валерій Володимирович Бугайова Марина Едуардівна Демидюк Павло Вікторович Дмитрiєв Олександр Ілліч Дранчук Микола Володимирович Карпина Віталій Анатолійович Миронюк Денис Валерійович Овсяннікова Любовь Іванівна Османов Темраз Шамсутдінович Петросян Лариса Ігорівна Позняк Іван Іванович Попович Василь Іванович Радченко Михайло Васильович Федорченко Дмиро Альфредович Штеплюк Іван Іванович popup.nrat_date 2020-04-02 Close
R & D report
Transparent electroconductive films based on doped ZnO with higher radiation resistance for photovoltaic devices
Head: Lashkarev Geogiy Vadimovich. Transparent electroconductive films based on doped ZnO with higher radiation resistance for photovoltaic devices. (popup.stage: ). I.N.Frantsevich Institute for Problems of Materials Science of NAS of Ukraine. № 0216U000962
1 documents found

Updated: 2026-03-22


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