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Information × Registration Number 0216U001195, 0115U005017 , R & D reports Title Terahertz properties of semiconductor nanostructures with high carrier mobility to create radiation detectors. popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 27-01-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The work addresses issues related to the development of infrared (IR) and terahertz (THz) radiation detectors based on mercury - cadmium - telluride (MCT). Demonstrated ability to create two-color detector based on semiconductor thin layers of narrow-gap MCT that operates as a sub-THz (140mkm) direct bolometr detector and infrared (3 - 10 microns) photoconductor at room temperature and at a moderate cooling. Obtained detector parameters are suitable for many applications, and the detectors can be implemented as arrays. The characteristics of these two-color detectors can be monitored and optimized by selecting parameters and configuration of MCT layers and antennas. In order to develop new effective broadband detectors of THz- and sub-THz range the mechanisms of current transport and relaxation were studied in quantum wells of CdTe/Hg1-xCdxTe/CdTe with inverted band structure at the liquid nitrogen temperature. The elastic and inelastic electron relaxation mechanisms and the carrier mobility were simuladed for the quantum well as a result of direct solution of the Boltzmann transport equation by an iterative procedure. Product Description popup.authors Гуменюк-Сичевська Жанна Віталіївна Забудський Вячеслав Володимирович Кухтарук Наталія Іванівна Мележик Євген Олександрович Сахно Микола Вадимович Сизов Федір Федорович Цибрій Зеновія Федорівна Шевчик-Шекера Анна Володимирівна popup.nrat_date 2020-04-02 Close