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Information × Registration Number 0216U001911, 0116U002905 , R & D reports Title Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod popup.stage_title Head Kladko Vasyl Petrovych, Registration Date 06-06-2016 Organization V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine popup.description2 Two basis technological processes (planar and meza type) of photodetector creation were developed. For these processes technological passes and whole technological operations of photodetector creation were detailed. Were obtained photopatterns and experimental patterns of PSE-2. Product Description popup.authors Єшан В.М. Бєляєв О.Є. Велігура Л.І. Гвоздянчук І.І. Голтвянський Ю.В. Григорук О.В. Гудименко О.Й. Дверніков Б.Ф. Дубіковський О.В. Калістий Г.В. Капшученко Н.М. Космін А.С. Кривий С.Б. Максименко З.В. Матвієнко Л.М. Мельник В.П. Михайленко В.М. Оберемок О.С. Педченко Ю.М. Романюк Б.М. Рюхтін В.В. Сабов Т.М. Сапон С.В. Сафрюк Н.В. Смолій М.І. Стадник О.А. Федулов В.В. Шаран М.М. popup.nrat_date 2020-04-02 Close
R & D report
Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod
Head: Kladko Vasyl Petrovych. Technology development and creation of photosensitive structure on base of InSb, in particular photosensitive elements of PD-301 photodiod. (popup.stage: ). V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine. № 0216U001911
1 documents found

Updated: 2026-03-26


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