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Registration Number

0216U003377, 0113U003066 , R & D reports

Title

The study of phenomena of formation and degradation of nanostructured silicon surface, obtained by a new method of nonelectrical etching

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Head

Brytavskyi Ievgen Viktorovych,

Registration Date

18-02-2016

Organization

Odesa I.I.Mechnikov national university.Pervomaisk institute.

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The concept of the formation of nano-structured silicon surface at electroless etching was developed and a physical model of the process of etching silicon-metal based hole injection at the interface was built; a mechanism of forming silicon nanostructures of various shapes having predetermined physical properties, depending on their preparation technology was studied. Also, the basic physical properties (optical, electrical) of nano-silicon, depending on the structure were investigated. The physical mechanisms of the sensitivity of the sensor based on silicon nanowires obtained by etching silicon were studied, and the a theoretical model of sensitivity was performed. The basic mechanisms of the influence of structural defects on the silicon surface during the forming processes were carried out.

Product Description

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Миндрул В.Б.
Ніцук Ю.А.
Павлєнко М.М.
Рімашевський О.А.
Сминтина В.А.
Яцунський І.Р.

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2020-04-02