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Information × Registration Number 0216U003377, 0113U003066 , R & D reports Title The study of phenomena of formation and degradation of nanostructured silicon surface, obtained by a new method of nonelectrical etching popup.stage_title Head Brytavskyi Ievgen Viktorovych, Registration Date 18-02-2016 Organization Odesa I.I.Mechnikov national university.Pervomaisk institute. popup.description2 The concept of the formation of nano-structured silicon surface at electroless etching was developed and a physical model of the process of etching silicon-metal based hole injection at the interface was built; a mechanism of forming silicon nanostructures of various shapes having predetermined physical properties, depending on their preparation technology was studied. Also, the basic physical properties (optical, electrical) of nano-silicon, depending on the structure were investigated. The physical mechanisms of the sensitivity of the sensor based on silicon nanowires obtained by etching silicon were studied, and the a theoretical model of sensitivity was performed. The basic mechanisms of the influence of structural defects on the silicon surface during the forming processes were carried out. Product Description popup.authors Миндрул В.Б. Ніцук Ю.А. Павлєнко М.М. Рімашевський О.А. Сминтина В.А. Яцунський І.Р. popup.nrat_date 2020-04-02 Close