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Information × Registration Number 0216U003589, 0114U000677 , R & D reports Title Developvent of the technology of growth of nanostructured carbonized materials and silicon carbide for opto- and microelectronics popup.stage_title Head Lysenko Volodymir Sergiyovych, Registration Date 01-02-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Deposition of amorphous a - SiOC: H thin films on silicon and glass substrates have been performed by magnetron sputtering of silicon target in argon-methane-oxygen gas mixture flow. Each gas flow rate was controlled independently with fixed total pressure. A series of the films was fabricated to analyze the effect of flow rate of working gases and discharge power on structure and photolumimescent properties of the films. Structure of the films was analyzed by IR spectroscopy in transmission and reflectance mode. Photoluminesent properties was evaluated using excitation by 375 nm LED. It was found that (2) Si-C interatomic bonds are not formed with such processing and structure of the films is represented by a-SiO2:H/a-C:H nanocomposite; (2) enrichment of film by carbon results in significant enhancement of visible photoluminescence. Product Description popup.authors Васін Андрій Володимирович Назаров Олексій Миколайович Русавський Андрій Вадимович popup.nrat_date 2020-04-02 Close