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Information × Registration Number 0216U003878, 0111U000047 , R & D reports Title Photoelectrical, optical and fluctuating phenomena in light-emitting wide-band gap semiconductor compounds, in semiconductor structures for micro- and nano-electronics and development of technological methods of their making. popup.stage_title Head Korsunska Nadiia Ovsiivna, Registration Date 22-02-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of study - layers and single crystal ZnO, powders ZnS, doped with Mn or Cu, colloidal CdSe quantum dots in a polymer matrix, layers of Si-SiO2, Si-Al2O3, nanopowders ZrO2, epitaxial heterostructures InAlGaAs / GaAs with InAs quantum dots, deluted ferromagnetic semiconductors based on GaAs, crystals Ge, Si - FINFET KHI MOS transistors. Purpose - to clarify the mechanism of emission and fluctuation nonequilibrium processes in crystals and low-dimensional structures based on A2B6, A3B5 compounds and silicon, FINFET SOI MOS transistors, mechanisms of ferromagnetism in diluted ferromagnetic semiconductors based on GaAs, and development of production technology of ceramics and layers based on zinc oxide, ZnO single crystals as well as elaboration of diagnostic methods of optical germanium single crystals. Research methods - optical, fluorescent, electric, photoelectric , X-ray diffraction, electron paramagnetic resonance, Raman, spectroscopy, noise. As a result of work the mechanisms of emission and Si nanocrystals formation in the layers of Si-SiO2 and Si-Al2O3. It is shown that the main radiation channel in the Si-SiO2 layers is exciton recombination in Si-ncs while in Si-Al2O3 layers dominant radiation chanel is associated with the centers in the Si-ncs / matrix interface or defects in the matrix. It is shown that the ceramic layers and ZnO have two types of radiation centers that have a different mechanism of interaction with matrax lattice. In is shown the possibility of cramic MgZnO:TiO2 aplication as a source of white light. The original method of growing of ZnO bulk crystals is developed. The experiments on sublimation of ZnO powder as a source material on a sapphire substrate in helium atmosphere were performed resulting in formation of polycrystalline ZnO plates of 1 cm thickness. The methods of increase of emission intensity of CdSe QDs in the polymer are developed. It is shown that intensity, band width and spectral position of the luminescence of InAs quantum dots in quantum wells with relaxed InAlGaAs layers depends on the composition of the coating layer. The technology of GaMnAs, GaBiMnAs and GaFeAs films was processed. The GaMnAs and GaBiMnAs films doped with 1at% of Mn are ferromagnetic semiconductors with a acceptor-type conductivity, while GaFeAs films are semi-isolating paramagnetics. The ways to improve the magnetic properties were proposed. It was established the mechanisms that determine the shape of the noise spectrum in the n-channel finFETs with the gate HfSiON/SiO2 and HfO2/SiO2 stacks. New noise methods of the study of physical processes in finFETs and planar transistors were developed. Analytical expressions for virial relations for electronic systems with Coulomb interaction for any electron-phonon coupling were obtained and the programs for numerical verification of these relations were proposed. Express method to control the dislocation density in optical germanium wafers of large area was developed. Product Description popup.authors Бондаренко В.О. Борковська Л.В. Веровський І.М. Гарбар М.П. Каширіна Н.І. Корсунська Н.О. Кудіна В.І. Кушніренко В.І. Маркевич І.В. Осіпьонок М.М. Папуша В.П. Пекар Г.С. Сингаївський О.Ф. Стара Т.Р. Хоменкова Л.Ю. Шульга К.П. Щербина Л.В. Яструбчак О.Б. popup.nrat_date 2020-04-02 Close