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Information × Registration Number 0216U005808, 0113U005879 , R & D reports Title Development of technologies and devices for applying the metal contacts on the surface of single-crystal semiconductor SdZnTe and polycrystalline diamond films using a combination of high and arc plasma sources popup.stage_title Head Taran Valeriy S, Кандидат фізико-математичних наук Registration Date 12-02-2016 Organization National Science Center "Kharkiv Institute of Physics and Technology popup.description2 The device BI-01 ("measuring the ionization - 01") for the measurement of ionizing radiation was developed. Sensor for the detection of radiation is semiconductor detector based on alloy CdZnTi. Metallization of the contacts was carried out using a combination of high frequency and arc plasma sources. The made measuring device is a device in the set of that enter block of preliminary preprocessing the signal , that provides transformation of short impulses of electric charge from a detector in voltage, further amplification and integration of the recived signals for every cycle of transformation that is worked out a comptroller, on a base PIC18F25K80 of Microchip Technology Inc. company with the modules of transformation, organs of control and indication, auxiliary units and power supplies. Software is created and realized for a measuring device in the environment of development of MPLAB IDE in high-level of MPLAB C18 language. For providing of analysis of origin of the separate charged ionized particles into the interval of integration the account mode of corresponding impulses is provided. For normalization of such impulses it is necessary to use the special amplifiers-shaper. The count of the formed impulses is provided by high-speed multidigit integral counter with subsequent translation in a comptroller. A measuring ionising device was tested on the experimental thermonuclear set up. Registration by means of measuring device of ВI - 01 high-energy radiation on facilities allows to warn and show the danger of stay of personnel in an experimental hall during work of physical installations. Product Description popup.authors Вєрьовкін А.А. Губарєв С.П. Золототрубова М.І. Клосовський А.В. Красний В.В. Кутній В.Є. Лозіна А.С. Місірук І.О. Мітрошина О.З. Наконечний Д.В. Опалєва Г.П. Рибка О.В. Сергієц М.А. Соколов С.О. Таран В.С. Тимошенко О.І. Холомеев Г.О. popup.nrat_date 2020-04-02 Close
R & D report
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Head: Taran Valeriy S. Development of technologies and devices for applying the metal contacts on the surface of single-crystal semiconductor SdZnTe and polycrystalline diamond films using a combination of high and arc plasma sources. (popup.stage: ). National Science Center "Kharkiv Institute of Physics and Technology. № 0216U005808
1 documents found

Updated: 2026-03-21