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Information × Registration Number 0216U006940, 0115U006717 , R & D reports Title Making of experimental standards and research of high temperature diffusion boron and phosphorus in silicon from solid source popup.stage_title Head Ostrovskii Ihor Petrovych, Registration Date 01-08-2016 Organization Lviv Polytechnic National University popup.description2 In this work the experimental samples were fabricated and a high-temperature diffusion of phosphorus and boron in silicon planar solid aluminoborosilicate sources based on heat-resistant substrates compounds was studied for doping silicon in the semiconductor manufacturing processes of integrated circuits and devices. The produced sources allow to obtain homogeneous diffuse layer in the temperature range 950-1050 ° C. The developed phosphorus sources based on boron phosphosilicate, aluminoborosilicate compounds are economical to manufacture in comparison with existing analogues, and the technology of their creation is not limited by the diameter. Product Description popup.authors Богдановський Ю.М. Мищишин В.М. popup.nrat_date 2020-04-02 Close