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Information × Registration Number 0216U007511, 0116U004322 , R & D reports Title Development of new technologies of solar converters formation using thin-film structures with variband layer, embedded metal plasmonic particles and electrostatically charged ferroelectric layer popup.stage_title Head Vladimir G. Litovchenko, Registration Date 20-12-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The object of this study is the anode-chemical processes of porous silicon layers formation in n-type conductivity, as well, as laser-induced nano-structuring of the SiOx / Si system . The purpose is to study the possibility of combining of the enlightenment and surface passivation functions of silicon solar cells (SC) through the formation of nano-structured porous silicon layers. The research method is the measurement of photo-technical, optical and morphological parameters of solar cells with the rear metallization (SERM) in the spectral conditions AM 1.5 with layered etching (spectral dependence of short circuit current, ellipsometry, scanning electron microscopy image (SEM)). For investigation the following settings were applied: magnetron sputtering, laser modified of solid state, ellipsometry, scanning electron microscopy (SEM) high resolution (~ 20 nm) (in the Center of "Mikroanalityka" of the Institute of Microdevices of NAS of Ukraine), as well, as the testing equipment certified by the State Consumed Standard of Ukraine of the Center of Solar and Photovoltaic Cells in V.E. Lashkarev ISP NAS of Ukraine. The principal possibility of combining of the functions of enlightenment and SC surface passivation one by forming of the nanostructured porous silicon layers is shown. It was established that the electrolytic forming of microporous film in n-type silicon doped by phosphorous in alcoholic HF solution does not require additional lighting of the sample and occurs even in the dark with small voltage (~ 1.2 V) on the electrolytic cell. It was determined that, as a result of n-type silicon immersion in the electrolyte, a layer depleted by major carriers on its surface is created, so that the main contribution to the effective surface recombination velocity on this surface carriers is realised by recombination in the field of the surface charge which is estimated as 10^4-10^5 cm / sec. The effective refractive index in the film, according to ellipsometric studies is n = 2,0-2,35, that indicates that the microporous silicon as an effective antireflaction material for silicon solar cells can be used. The principle possibility of laser-stimulated phase separation of SiOx film on monoatomic Si nanocrystals surrounded by SiO2oxide matrix is shown. It was established that laser annealing results into increase of SiOx film absorbance with a short-shift of transmission minimum from 1032 cm^-1 to 1073 cm^-1. The results of this stage of research are original, have the potential to increase conversion efficiency CE based on Si, and will be used in particular in the following stages of the project. Product Description popup.authors Горбанюк Тетяна Іванівна Костильов Віталій Петрович Мусаєв Сергій Мусаєвич Федоренко Леонід Леонідович Чапський Сергій Юр'євич popup.nrat_date 2020-04-02 Close