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Information × Registration Number 0216U007542, 0116U006421 , R & D reports Title "High-k oxides doped with Si or Ge nanoclusters for microelectronic and photonic applications" popup.stage_title Head Khomenkova Larysa Yuriivna, Registration Date 21-12-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The object of study - layers of aluminum oxide and hafnium oxide doped with germanium. Project goal - to establish the nature of the physical processes responsible for the formation of Ge-Al2O3 and Ge-HfO2 solid solutions and their thermo-stimulated decompsotion, to elucidate the mechanisms of formation of Ge nanoclusters and nanocrystals, and to define the methods or approaches for the monitoring the structural, optical and electrical properties of materials for thier further application in microelectronics and phtonics. Research methods - optical, luminescence, electric characterization, X-ray diffraction, Raman scattering, transmission electron microscopy. The effect of excess Ge content and post-annealing treatment on the decompsition processes in Ge-Al2O3 and Ge-HfO2 layers was studied. The role of germanium in the modification of the structure of hafnium oxide from monoclinic to amorphous and stabilization of this latter was demosntrated. It was shown that the formation of Ge nanocrystals was observed and optimal technological conditions allowed their formation in amorphous oxide matrix were determined. It was shown that annealing of the samples leads to the appearance of photoluminescence. Its spectrum contains several components, whose relative contribution depends on the Ge content and excitation light wavelngth. Memory effects were demonstrated for the samples based on hafnium oxide doped with germanium. Proposed assumptions about the development of the research object - to improve the technology of deposition of high-k oxide layers with homogeneous dopant distribution for material application for the production of various devices of microelectronics and photonics. Product Description popup.authors Борковська Л.В. popup.nrat_date 2020-04-02 Close