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Information × Registration Number 0216U007609, 0116U005451 , R & D reports Title Development of methods and techniques of fabrication of Cd(Zn)Te semiconductor-based X/gamma-ray detectors with high resolution for security and diagnostics instruments popup.stage_title Head Gnatyuk Volodymyr Anastasiyovych, Registration Date 23-12-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Defined modes stimulated laser treatment for etching the surface crystal CdTe. It is shown that the laser irradiated samples of previously deposited film In doping is formed and p-n junction in the surface layer of the crystal investigated its electric and photovoltaic properties. Settings experimental diodes made of p-n transition In / CdTe / Au evidence of effectiveness and prospects of the developed method to create based on these barrier structures sensitive detector elements for X-ray and gamma radiation5481 Product Description popup.authors Гнатюк Володимир Анастасійович Горонескуль Віктор Юрійович Левицький Сергій Миколайович Рудзинський В. popup.nrat_date 2020-04-02 Close
R & D report
Development of methods and techniques of fabrication of Cd(Zn)Te semiconductor-based X/gamma-ray detectors with high resolution for security and diagnostics instruments
Head: Gnatyuk Volodymyr Anastasiyovych. Development of methods and techniques of fabrication of Cd(Zn)Te semiconductor-based X/gamma-ray detectors with high resolution for security and diagnostics instruments. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0216U007609
1 documents found

Updated: 2026-03-21


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