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Information × Registration Number 0216U008128, 0116U006421 , R & D reports Title "High-k oxides doped with Si or Ge nanoclusters for microelectronic and photonic applications". popup.stage_title Head Khomenkova Larysa Yuriivna, Registration Date 10-10-2016 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of research - the layers of alumina, doped with germanium (Ge-Al2O3). Purpose - to establish the nature of the physical processes that occur during the formation Ge-Al2O3 solid solutions and their thermostimulated decomposition, to elucidate the mechanisms of formation fo semiconducting nanoclusters and nanocrystals, and to determine methods of monitoring of the structural, optical and electrical properties of materials for their micro- and photoelectronic applications. Research methods - optical, photoluminescent, electrical, X-ray diffraction, Raman scattering. The influence of excess germanium content and modes of thermal treatments on the processes of decay in layers of aluminum oxide doped with germanium. Found that unannealed layers are amorphous and amorphous phase containing germanium. The position of the corresponding peak in the spectrum of Raman scattering is observed at ~268 cm-1 [Ge]<30 at%, whereas films with a high content of germanium 274 cm-1, indicating the intensity of layers. The formation of amorphous germanium cluster begins at TA=550C, and they marked the crystallization temperature TA=600C, which is higher than the temperature of crystallization layers of pure germanium. Established that annealing the samples also leads to the appearance of photoluminescence in the 550-800 nm for samples of [Ge]<70 at.%. The range includes two components luminescence with maxima at 580-620 and 700-730 nm. It is shown that the first one is due to defective aluminum oxide, while the second is caused by recombination of carriers in germanium crystallites. A comparative analysis of the characteristics of the layers of Ge-Al2O3 and Si-Al2O3. Future development of the research object - improving the technology of the fabrication of high-k oxide layers, doped with germanium, for the production of microelectronics and photonic devices. Product Description popup.authors Борковська Л.В. Поліщук Ю.О. popup.nrat_date 2020-04-02 Close